Strained germanium thin film membrane on silicon substrate for optoelectronics

Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus

(2011) Jeehwan Kim et al.   APPLIED PHYSICS LETTERS

Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy

(2011) Yijie Huo et al.   APPLIED PHYSICS LETTERS

High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode

(2011) G. Thareja et al.   IEEE ELECTRON DEVICE LETTERS

Accounting for Interference, Scattering, and Electrode Absorption to Make Accurate Internal Quantum Efficiency Measurements in Organic and Other Thin Solar Cells

(2010) George F. Burkhard et al.   ADVANCED MATERIALS

Strain-enhanced photoluminescence from Ge direct transition

(2010) T.-H. Cheng et al.   APPLIED PHYSICS LETTERS

Control of direct band gap emission of bulk germanium by mechanical tensile strain

(2010) M. El Kurdi et al.   APPLIED PHYSICS LETTERS

Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism

(2010) Moustafa El Kurdi et al.   JOURNAL OF APPLIED PHYSICS

Mid-infrared photonics in silicon and germanium

(2010) Richard Soref   Nature Photonics

Direct-bandgap luminescence at room-temperature from highly-strained Germanium nanocrystals

(2010) Latha Nataraj et al.   OPTICS EXPRESS

Enhanced direct bandgap emission in germanium by micromechanical strain engineering

(2009) Peng Huei Lim et al.   OPTICS EXPRESS

Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate

(2009) Szu-Lin Cheng et al.   OPTICS EXPRESS

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

(2009) Xiaochen Sun et al.   OPTICS LETTERS

Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition

(2008) Yu Bai et al.   JOURNAL OF APPLIED PHYSICS