Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

标题
Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 1, Pages 013513
出版商
AIP Publishing
发表日期
2013-01-05
DOI
10.1063/1.4772781

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