Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

(2012) A. Sasikumar et al.   IEEE ELECTRON DEVICE LETTERS

Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces

(2012) Jun Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interface recombination parameters of atomic-layer-deposited Al2O3 on crystalline silicon

(2012) F. Werner et al.   JOURNAL OF APPLIED PHYSICS

Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

(2012) Xiang Liu et al.   JOURNAL OF ELECTRONIC MATERIALS

Impact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum

(2011) E. Simoen et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress

(2011) Masafumi Tajima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors

(2011) George Apostolopoulos et al.   JOURNAL OF APPLIED PHYSICS

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

(2011) Y.C. Chang et al.   MICROELECTRONIC ENGINEERING

p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents

(2010) Christophe A. Hurni et al.   APPLIED PHYSICS LETTERS

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

(2010) D. Gregušová et al.   JOURNAL OF APPLIED PHYSICS

Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric

(2009) Hyeong-Seon Yun et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

(2008) A. R. Arehart et al.   APPLIED PHYSICS LETTERS