Impact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum

A DLTS Study of SiO2 and SiO2/SiNx Surface Passivation of Silicon

(2011) E. Simoen et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

(2011) J. M. Rafí et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

A deep-level transient spectroscopy study of silicon interface states using different silicon nitride surface passivation schemes

(2010) Chun Gong et al.   APPLIED PHYSICS LETTERS

Role of field-effect on c-Si surface passivation by ultrathin (2–20 nm) atomic layer deposited Al2O3

(2010) N. M. Terlinden et al.   APPLIED PHYSICS LETTERS

Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

(2010) G. Dingemans et al.   APPLIED PHYSICS LETTERS

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

(2010) G. Dingemans et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide

(2010) Pierre Saint-Cast et al.   IEEE ELECTRON DEVICE LETTERS

Effect of Deep-Level Defects on Surface Recombination Velocity at the Interface Between Silicon and Dielectric Films

(2010) Babak Imangholi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Detrapping dynamics in Al2O3 metal-oxide-semiconductor

(2010) Rosario Rao et al.   JOURNAL OF APPLIED PHYSICS

Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy

(2010) Chun Gong et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

On the choice of the test structure for the electrical characterization of dielectrics for silicon solar cells

(2010) X. Loozen et al.   Physica Status Solidi-Rapid Research Letters

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

(2010) Moonju Cho et al.   SOLID-STATE ELECTRONICS

High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition

(2009) Shinsuke Miyajima et al.   Applied Physics Express

Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

(2009) Pierre Saint-Cast et al.   APPLIED PHYSICS LETTERS

High Efficiency Silicon Solar Cells with Bilayer Passivation Structure

(2009) W. C. Sun et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

(2009) G. Dingemans et al.   JOURNAL OF APPLIED PHYSICS

Thermal stability of the Al2O3passivation on p-type silicon surfaces for solar cell applications

(2009) Jan Benick et al.   Physica Status Solidi-Rapid Research Letters

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation

(2008) J. J. H. Gielis et al.   JOURNAL OF APPLIED PHYSICS