Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric

Published 2009 View Full Article

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Title
Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
Authors
Keywords
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Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 54, Issue 2, Pages 707-711
Publisher
Korean Physical Society
Online
2009-06-24
DOI
10.3938/jkps.54.707

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