Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

(2011) Kazuhito Ban et al.   Applied Physics Express

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

(2010) Cyril Pernot et al.   Applied Physics Express

Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

(2010) James R. Grandusky et al.   Applied Physics Express

222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties

(2010) Hideki Hirayama et al.   Applied Physics Express

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

(2010) V. N. Jmerik et al.   APPLIED PHYSICS LETTERS

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

(2010) A. Rice et al.   JOURNAL OF APPLIED PHYSICS

Seeded growth of AlN bulk crystals in m- and c-orientation

(2009) P. Lu et al.   JOURNAL OF CRYSTAL GROWTH

Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

(2008) Harumasa Yoshida et al.   APPLIED PHYSICS LETTERS