Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

(2011) Jing Zhang et al.   APPLIED PHYSICS LETTERS

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

(2011) Yitao Liao et al.   APPLIED PHYSICS LETTERS

Al Composition Dependence of the Optical Gain Characteristics of a-plane Al-rich AlGaN/AlN Quantum-well Structures

(2011) Seoung-Hwan Park   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations

(2010) A. Atsushi Yamaguchi   APPLIED PHYSICS LETTERS

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

(2010) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

(2010) W. Sun et al.   APPLIED PHYSICS LETTERS

Current-induced degradation of high performance deep ultraviolet light emitting diodes

(2010) Craig G. Moe et al.   APPLIED PHYSICS LETTERS

100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam

(2010) Takao Oto et al.   Nature Photonics

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

(2009) A. Bhattacharyya et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics