Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

(2011) Ž. Gačević et al.   JOURNAL OF APPLIED PHYSICS

Thermal conductivity of aluminium nitride thin films prepared by reactive magnetron sputtering

(2011) C Duquenne et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electrical investigations of AlGaN/AlN structures for LEDs on Si(111)

(2011) H. Witte et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

(2011) Z.P. Wang et al.   PHYSICS LETTERS A

Piezoelectric characteristic of nanocrystalline AlN films obtained by pulsed laser deposition at room temperature

(2010) C. Cibert et al.   APPLIED PHYSICS LETTERS

High velocity shear horizontal surface acoustic wave modes of interdigital transducer/(100) AlN/(111) diamond

(2009) Sean Wu et al.   APPLIED PHYSICS LETTERS

Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy

(2009) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

Competitive growth mechanisms of aluminum nitride thin films deposited by off-normal reactive magnetron sputtering

(2008) D. Deniz et al.   JOURNAL OF APPLIED PHYSICS

High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy

(2008) Ken-ichi Eriguchi et al.   JOURNAL OF CRYSTAL GROWTH

Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target

(2008) Z. Vashaei et al.   JOURNAL OF CRYSTAL GROWTH