Journal
PHYSICS LETTERS A
Volume 375, Issue 33, Pages 3007-3011Publisher
ELSEVIER
DOI: 10.1016/j.physleta.2011.06.043
Keywords
Pulsed laser deposition (PLD); Aluminum nitride (AlN); Nitrogen pressure effects
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Funding
- Grants-in-Aid for Scientific Research [23656212] Funding Source: KAKEN
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Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulsed laser deposition (PLO) in nitrogen (N-2) environment. The AlN preferential orientation changes from (002) to (100) with increasing N-2 pressure. Such different behaviors are discussed in terms of deposition-rate-dependent preferential orientation, kinetic energy of depositing species and confinement of laser plume. Finally, sample deposited at 0.9 Pa is proved to have the highest (002) peak intensity, the lowest FWHM value, the highest deposition rate and a relatively low RMS roughness (1.138 nm), showing the optimal growth condition for c-axis-oriented AlN growth at this N-2 pressure. (C) 2011 Elsevier B.V. All rights reserved.
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