High-Mobility TaN/$\hbox{Al}_{2}\hbox{O}_{3}$/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer

Effects of Si-cap thickness and temperature on device performance of Si/Ge1−xCx/Si p-MOSFETs

(2010) Mustafa Jamil et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Ge/GeO2Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics

(2009) Choong Hyun Lee et al.   Applied Physics Express

Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD- $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

(2009) Chao-Ching Cheng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improved Electrical Properties of Ge p-MOSFET With $ \hbox{HfO}_{2}$ Gate Dielectric by Using $\hbox{TaO}_{x} \hbox{N}_{y}$ Interlayer

(2008) J.P. Xu et al.   IEEE ELECTRON DEVICE LETTERS

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

High Performance 70-nm Germanium pMOSFETs With Boron LDD Implants

(2008) G. Hellings et al.   IEEE ELECTRON DEVICE LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today