Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

Published 2010 View Full Article

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Title
Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 9, Pages 1020-1022
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-08-11
DOI
10.1109/led.2010.2055828
References
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