Band offsets and Fermi level pinning at metal-Al2O3interfaces

The distribution of chemical elements in Al- or La-capped high-κ metal gate stacks

(2010) M. Bosman et al.   APPLIED PHYSICS LETTERS

Thermal stability comparison of TaN on HfO2 and Al2O3

(2010) Jinhee Kwon et al.   APPLIED PHYSICS LETTERS

Scaling equivalent oxide thickness with flat band voltage (VFB) modulation using in situ Ti and Hf interposed in a metal/high-k gate stack

(2010) Changhwan Choi et al.   JOURNAL OF APPLIED PHYSICS

Electronic and atomic structure of metal-HfO2interfaces

(2010) K. Y. Tse et al.   PHYSICAL REVIEW B

Nonvolatile memories using deep traps formed in Al2O3 by metal ion implantation

(2009) Min Choul Kim et al.   APPLIED PHYSICS LETTERS

Systematic study on work-function-shift in metal/Hf-based high-k gate stacks

(2009) Yuki Kita et al.   APPLIED PHYSICS LETTERS

Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation

(2009) Z. C. Yang et al.   APPLIED PHYSICS LETTERS

Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism

(2009) B. E. Coss et al.   APPLIED PHYSICS LETTERS

Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation

(2009) Yen-Ting Chen et al.   APPLIED PHYSICS LETTERS

Integration of High-$\kappa$ Dielectrics and Metal Gate on Gate-All-Around Si-Nanowire-Based Architecture for High-Speed Nonvolatile Charge-Trapping Memory

(2009) Guo-Qiang Lo et al.   IEEE ELECTRON DEVICE LETTERS

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

(2009) Eun Ji Kim et al.   JOURNAL OF APPLIED PHYSICS

Band offsets and work function control in field effect transistors

(2009) John Robertson   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Extended Frenkel pairs and band alignment at metal-oxide interfaces

(2009) O. Sharia et al.   PHYSICAL REVIEW B

Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide

(2008) Kisik Choi et al.   APPLIED PHYSICS LETTERS

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

(2008) P. D. Kirsch et al.   APPLIED PHYSICS LETTERS

Anion photoelectron spectroscopy of TaOn- (n=1–3)

(2008) Weijun Zheng et al.   CHEMICAL PHYSICS LETTERS

Impact of incorporated Al on the TiN/HfO[sub 2] interface effective work function

(2008) Ka Xiong et al.   JOURNAL OF APPLIED PHYSICS

XPS depth-profile of the suboxide distribution at the native oxide/Ta interface

(2008) Manika Khanuja et al.   JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA

Effects of aluminum incorporation on band alignment at theSiO2∕HfO2interface

(2008) Onise Sharia et al.   PHYSICAL REVIEW B

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

(2007) Huang-Chun Wen et al.   MICROELECTRONIC ENGINEERING