☆ 4.7 Article

An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

JOURNAL OF ALLOYS AND COMPOUNDS (2010)

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Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 489, Issue 2, Pages 461-464

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2009.09.086

Keywords

Nitride materials; Crystal growth; X-ray diffraction

Categories

Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering

Funding

  1. National Natural Science Foundation of China [60836003, 60776047, 60506001, 60476021, 60576003]
  2. National Science Fund for Distinguished Young Scholars [60925017]
  3. National Basic Research Program of China [2007CB936700]
  4. National High Technology Research and Development Program of China [2007AA03Z401]

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The influence of well thickness on the electroluminescence (EL) of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition is investigated. It is found that the peak wavelength of EL increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. The redshift is mainly attributed to the quantum confined Stark effect (QCSE). As a contrast, it is found that the EL intensity of InGaN/GaN MQWs increases with the increase of well thickness in spite of QCSE. The result of X-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of EL intensity of InGaN/GaN MQWs. (C) 2009 Elsevier B.V. All rights reserved.

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