Temperature Dependence and Postirradiation Annealing Response of the $1/f$ Noise of 4H-SiC MOSFETs

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

(2013) Gang Liu et al.   IEEE ELECTRON DEVICE LETTERS

Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

(2012) Cher Xuan Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures

(2011) Xiao Shen et al.   APPLIED PHYSICS LETTERS

Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices

(2011) Cher Xuan Zhang et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Si-like low-frequency noise characteristics of 4H-SiC MOSFETs

(2011) S L Rumyantsev et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs

(2010) Sarit Dhar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the $\hbox{1}/f$ Noise of nMOS and pMOS Transistors

(2009) Sarah A. Francis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

10-kV SiC MOSFET-Based Boost Converter

(2009) Jun Wang et al.   IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors

(2009) Xing J. Zhou et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides

(2009) Rajan Arora et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

(2009) John Rozen et al.   JOURNAL OF APPLIED PHYSICS

Radiation Effects in MOS Oxides

(2008) James R. Schwank et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

(2008) S. L. Rumyantsev et al.   JOURNAL OF APPLIED PHYSICS

Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface

(2008) John Rozen et al.   JOURNAL OF APPLIED PHYSICS