A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs

Published 2010 View Full Article

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Title
A Study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOSFETs
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 6, Pages 1195-1200
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-04-15
DOI
10.1109/ted.2010.2045670

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