Temperature Dependence and Postirradiation Annealing Response of the $1/f$ Noise of 4H-SiC MOSFETs
出版年份 2013 全文链接
标题
Temperature Dependence and Postirradiation Annealing Response of the $1/f$ Noise of 4H-SiC MOSFETs
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 7, Pages 2361-2367
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-06-12
DOI
10.1109/ted.2013.2263426
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation
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