Hole transport in DGSOI devices: Orientation and silicon thickness effects

Published 2010 View Full Article

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Title
Hole transport in DGSOI devices: Orientation and silicon thickness effects
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 54, Issue 2, Pages 191-195
Publisher
Elsevier BV
Online
2010-01-07
DOI
10.1016/j.sse.2009.12.018

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