Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging

Properties of Atomic Layer Deposited HfO2Films on Ge Substrates Depending on Process Temperatures

(2012) Hyung-Suk Jung et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Germanium core-level shifts at Ge/GeO2interfaces through hybrid functionals

(2012) Jan Felix Binder et al.   PHYSICAL REVIEW B

Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements

(2011) M. Perego et al.   JOURNAL OF APPLIED PHYSICS

Structural model for the GeO2/Ge interface: A first-principles study

(2011) Shoichiro Saito et al.   PHYSICAL REVIEW B

Monolayer-induced band bending in the near-surface region of Ge(111)

(2011) A. J. Mäkinen et al.   PHYSICAL REVIEW B

Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface

(2010) Silvia Baldovino et al.   APPLIED PHYSICS LETTERS

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

(2010) E. Bersch et al.   JOURNAL OF APPLIED PHYSICS

Modeling of negatively charged states at the Ge surface and interfaces

(2009) P. Tsipas et al.   APPLIED PHYSICS LETTERS

Ge 3d core-level shifts at (100)Ge∕Ge(Hf)O2 interfaces: A first-principles investigation

(2008) G. Pourtois et al.   APPLIED PHYSICS LETTERS

Defect levels of dangling bonds in silicon and germanium through hybrid functionals

(2008) Peter Broqvist et al.   PHYSICAL REVIEW B

Band offsets of ultrathin high-κoxide films with Si

(2008) Eric Bersch et al.   PHYSICAL REVIEW B