Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications

Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

(2016) Stefano Ambrogio et al.   IEEE ELECTRON DEVICE LETTERS

Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices

(2016) Simone Balatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure

(2016) Hao Jiang et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch

(2015) Qi Wang et al.   ADVANCED MATERIALS

Intrinsic Tailing of Resistive States Distributions in Amorphous HfOx and TaOx Based Resistive Random Access Memories

(2015) Sergiu Clima et al.   IEEE ELECTRON DEVICE LETTERS

Normally-off Logic Based on Resistive Switches—Part I: Logic Gates

(2015) Simone Balatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Normally-off Logic Based on Resistive Switches—Part II: Logic Circuits

(2015) Simone Balatti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells

(2015) Nicolas Onofrio et al.   NATURE MATERIALS

Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device

(2015) Yu-Fen Wang et al.   Scientific Reports

A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems

(2015) Zhongqiang Wang et al.   Frontiers in Neuroscience

True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

(2015) Simone Balatti et al.   IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

(2014) Haitong Li et al.   IEEE ELECTRON DEVICE LETTERS

A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis

(2014) Luca Larcher et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

(2014)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability

(2014) Stefano Ambrogio et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

(2014) Chung-Wei Hsu et al.   NANOTECHNOLOGY

Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM

(2013) Simone Balatti et al.   IEEE ELECTRON DEVICE LETTERS

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

(2013) Peng Huang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

(2013) Sungho Kim et al.   Scientific Reports

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

(2011) Daniele Ielmini et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Thermochemical resistive switching: materials, mechanisms, and scaling projections

(2011) Daniele Ielmini et al.   PHASE TRANSITIONS

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

(2010) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Model of metallic filament formation and rupture in NiO for unipolar switching

(2010) Hyung Dong Lee et al.   PHYSICAL REVIEW B

Phase Change Materials and Their Application to Nonvolatile Memories

(2009) Simone Raoux et al.   CHEMICAL REVIEWS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes

(2009) Song-Lin Li et al.   JOURNAL OF APPLIED PHYSICS

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE