Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

(2013) V. Y.-Q. Zhuo et al.   APPLIED PHYSICS LETTERS

Bipolar ${\rm Ni}/{\rm TiO}_{2}/{\rm HfO}_{2}/{\rm Ni}$ RRAM With Multilevel States and Self-Rectifying Characteristics

(2013) Chung-Wei Hsu et al.   IEEE ELECTRON DEVICE LETTERS

Statistical Model and Rapid Prediction of RRAM SET Speed–Disturb Dilemma

(2013) Wun-Cheng Luo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

An Ultra-Low Reset Current Cross-Point Phase Change Memory With Carbon Nanotube Electrodes

(2012) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar Array

(2012) Chun-Li Lo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Self-Aligned Nanotube–Nanowire Phase Change Memory

(2012) Feng Xiong et al.   NANO LETTERS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

(2010) Jiun-Jia Huang et al.   APPLIED PHYSICS LETTERS

Storage-class memory: The next storage system technology

(2010) R. F. Freitas et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Overview of candidate device technologies for storage-class memory

(2010) G. W. Burr et al.   IBM JOURNAL OF RESEARCH AND DEVELOPMENT

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

A Family of Electronically Reconfigurable Nanodevices

(2009) J. Joshua Yang et al.   ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Random Circuit Breaker Network Model for Unipolar Resistance Switching

(2008) Seung Chul Chae et al.   ADVANCED MATERIALS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE