Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

标题
Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 2, Pages 197-199
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-12-22
DOI
10.1109/led.2010.2091489

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