标题
A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 12, Pages 4090-4097
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-12-04
DOI
10.1109/ted.2013.2287755
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- An Empirical Model for RRAM Resistance in Low- and High-Resistance States
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