Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure

Spinel compounds as multivalent battery cathodes: a systematic evaluation based on ab initio calculations

(2015) Miao Liu et al.   Energy & Environmental Science

Comparison of oxygen vacancy defects in crystalline and amorphous Ta2O5

(2015) Yuzheng Guo et al.   MICROELECTRONIC ENGINEERING

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

(2015) Astrid Marchewka et al.   Advanced Electronic Materials

Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Materials selection for oxide-based resistive random access memories

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in ${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ Resistive Random Access Memory

(2014) Kan-Hao Xue et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

(2014) R. Nakamura et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic Oxygen Vacancy and Extrinsic Aluminum Dopant Interplay: A Route to the Restoration of Defective TiO2

(2014) Conn O’Rourke et al.   Journal of Physical Chemistry C

The effects of screening length in the non-local screened-exchange functional

(2014) Yuzheng Guo et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electronic structure and stability of low symmetry Ta2O5polymorphs

(2014) Ja-Yong Kim et al.   Physica Status Solidi-Rapid Research Letters

RRAMs based on anionic and cationic switching: a short overview

(2014) Sergiu Clima et al.   Physica Status Solidi-Rapid Research Letters

First-principles calculations for point defects in solids

(2014) Christoph Freysoldt et al.   REVIEWS OF MODERN PHYSICS

Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories

(2013) Moon Young Yang et al.   APPLIED PHYSICS LETTERS

Non-metal doping of transition metal oxides for visible-light photocatalysis

(2013) Roland Marschall et al.   CATALYSIS TODAY

Electronic, dielectric, and optical properties of the B phase of niobium pentoxide and tantalum pentoxide by first-principles calculations

(2013) Santiago Pérez-Walton et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Hidden Structural Order in OrthorhombicTa2O5

(2013) Sung-Hoon Lee et al.   PHYSICAL REVIEW LETTERS

Unravelling the interplay of crystal structure and electronic band structure of tantalum oxide (Ta2O5)

(2012) Ramy Nashed et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Activation Energies for Diffusion of Defects in Silicon: The Role of the Exchange-Correlation Functional

(2011) Stefan K. Estreicher et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Metal/TiO2 interfaces for memristive switches

(2011) J. Joshua Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Spectromicroscopy of tantalum oxide memristors

(2011) John Paul Strachan et al.   APPLIED PHYSICS LETTERS

Probing the atomic structure of amorphous Ta2O5 coatings

(2011) R. Bassiri et al.   APPLIED PHYSICS LETTERS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

First-principles studies of Ta2O5polymorphs

(2011) Yu-Ning Wu et al.   PHYSICAL REVIEW B

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Oxygen vacancy levels and electron transport in Al2O3

(2010) D. Liu et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

First-principles study of diffusion of oxygen vacancies and interstitials in ZnO

(2009) Gui-Yang Huang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

(2009) Paolo Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology