Evolutionary Growth Strategy of GaN on (111) Diamond Modulated by Nano-Patterned Buffer Engineering

GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process

(2022) Yuichi Minoura et al.   Applied Physics Express

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

(2022) Mei Wu et al.   APPLIED PHYSICS LETTERS

A perspective on multi-channel technology for the next-generation of GaN power devices

(2022) Luca Nela et al.   APPLIED PHYSICS LETTERS

Piezotronic effect on two-dimensional electron gas in AlGaN/GaN heterostructure

(2022) Fobao Huang et al.   Nano Energy

Unveiling the Influence of Selective-area-regrowth Interfaces on Local Electronic Properties of GaN p-n Junctions for Efficient Power Devices

(2022) Alexander S. Chang et al.   Nano Energy

Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs

(2022) Xinyu Zhou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Seed Dibbling Method for the Growth of High-Quality Diamond on GaN

(2021) Reza Soleimanzadeh et al.   ACS Applied Materials & Interfaces

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

(2021) Jianbo Liang et al.   ADVANCED MATERIALS

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

(2021) Kai Fu et al.   APPLIED PHYSICS LETTERS

High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

(2021) Wenqiang Xu et al.   MATERIALS LETTERS

Thermal characterization of gallium nitride p-i-n diodes

(2018) J. Dallas et al.   APPLIED PHYSICS LETTERS

Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

(2018) Fengwen Mu et al.   SCRIPTA MATERIALIA

Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

(2018) Haiding Sun et al.   APPLIED SURFACE SCIENCE

Orientation of AlN Grains Nucleated on Different Diamond Substrates by Magnetron Sputtering

(2018) Hao Liu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

(2015) Huarui Sun et al.   APPLIED PHYSICS LETTERS

Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs

(2015) R. Zhang et al.   DIAMOND AND RELATED MATERIALS

Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

(2014) Zhiyu Lin et al.   APPLIED PHYSICS LETTERS

Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

(2014) J. W. Pomeroy et al.   APPLIED PHYSICS LETTERS

Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

(2013) Béla Pécz et al.   DIAMOND AND RELATED MATERIALS

Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate

(2013) Kazuyuki Hirama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy

(2013) M. Barchuk et al.   JOURNAL OF CRYSTAL GROWTH

Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

(2012) Kazuyuki Hirama et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-performance bulk thermoelectrics with all-scale hierarchical architectures

(2012) Kanishka Biswas et al.   NATURE

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

(2011) Kazuyuki Hirama et al.   APPLIED PHYSICS LETTERS

Thermal properties of graphene and nanostructured carbon materials

(2011) Alexander A. Balandin   NATURE MATERIALS

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

(2010) Amélie Dussaigne et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface

(2010) Kazuyuki Hirama et al.   JOURNAL OF APPLIED PHYSICS

Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates

(2009) G.W.G. van Dreumel et al.   DIAMOND AND RELATED MATERIALS

Formation and characterization of 4-inch GaN-on-diamond substrates

(2009) D. Francis et al.   DIAMOND AND RELATED MATERIALS

MOVPE growth of single-crystal hexagonal AlN on cubic diamond

(2009) Yoshitaka Taniyasu et al.   JOURNAL OF CRYSTAL GROWTH

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

(2009) A. Dussaigne et al.   JOURNAL OF CRYSTAL GROWTH

Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy

(2009) Masataka Imura et al.   JOURNAL OF CRYSTAL GROWTH

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

(2008) R. Jain et al.   APPLIED PHYSICS LETTERS

Diamond Heat Spreader Layer for High-Power Thin-GaN Light-Emitting Diodes

(2008) Po Han Chen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS