Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy

出版年份 2013 全文链接

标题

Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy

作者

关键词

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出版物

JOURNAL OF CRYSTAL GROWTH

Volume 386, Issue -, Pages 1-8

出版商

Elsevier BV

发表日期

2013-10-02

DOI

10.1016/j.jcrysgro.2013.09.041

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