Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

出版年份 2012 全文链接

标题

Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

作者

关键词

-

出版物

JAPANESE JOURNAL OF APPLIED PHYSICS

Volume 51, Issue -, Pages 090114

出版商

Japan Society of Applied Physics

发表日期

2012-08-17

DOI

10.1143/jjap.51.090114

向作者/读者发起求助以获取更多资源

Protocol

Reagent

Reprint

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

© Peeref 2019-2024. All rights reserved.