Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate

标题
Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 1S, Pages 01AG09
出版商
Japan Society of Applied Physics
发表日期
2013-12-21
DOI
10.7567/jjap.51.01ag09

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