Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

标题
Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 93, Issue 5, Pages 051113
出版商
AIP Publishing
发表日期
2008-08-08
DOI
10.1063/1.2969402

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