Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr > 70 μC/cm2) in Hf0.5Zr0.5O2 Thin Films
出版年份 2023 全文链接
标题
Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr
> 70 μC/cm2) in Hf0.5Zr0.5O2 Thin Films
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 70, Issue 7, Pages 3536-3541
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2023-05-30
DOI
10.1109/ted.2023.3277804
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
- (2022) Shelby S. Fields et al. Advanced Electronic Materials
- Imprint issue during retention tests for HfO2-based FRAM: An industrial challenge?
- (2021) J. Bouaziz et al. APPLIED PHYSICS LETTERS
- The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia
- (2021) Yongsun Lee et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Local epitaxial-like templating effects and grain size distribution in atomic layer deposited Hf0.5Zr0.5O2 thin film ferroelectric capacitors
- (2021) S. F. Lombardo et al. APPLIED PHYSICS LETTERS
- Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance
- (2021) Yi-Jan Lin et al. APPLIED PHYSICS LETTERS
- Many routes to ferroelectric HfO2: A review of current deposition methods
- (2021) Hanan Alexandra Hsain et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
- (2020) Vekateswarlu Gaddam et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1−x)O2 thin films
- (2020) H. Alex Hsain et al. APPLIED PHYSICS LETTERS
- The future of ferroelectric field-effect transistor technology
- (2020) Asif Islam Khan et al. Nature Electronics
- Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
- (2019) Uwe Schroeder et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Demonstration of High Ferroelectricity (P$_r$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1–xO2 Films
- (2019) Dipjyoti Das et al. IEEE ELECTRON DEVICE LETTERS
- Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films
- (2018) Rongrong Cao et al. IEEE ELECTRON DEVICE LETTERS
- Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
- (2018) Si Joon Kim et al. JOM
- Review and perspective on ferroelectric HfO2-based thin films for memory applications
- (2018) Min Hyuk Park et al. MRS Communications
- Nucleation-Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5 Zr0.5 O2 Thin Films
- (2018) Young Hwan Lee et al. Advanced Electronic Materials
- More features, more tools, more CrysTBox
- (2017) Miloslav Klinger JOURNAL OF APPLIED CRYSTALLOGRAPHY
- The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
- (2015) R. Materlik et al. JOURNAL OF APPLIED PHYSICS
- Impact of different dopants on the switching properties of ferroelectric hafniumoxide
- (2014) Uwe Schroeder et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- (2012) Ekaterina Yurchuk et al. THIN SOLID FILMS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
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