Thickness-dependent carrier polarity of MoTe2 transistors with NiTe2 semimetal contacts

Approaching the quantum limit in two-dimensional semiconductor contacts

(2023) Weisheng Li et al.   NATURE

Analysis of Physical and Electrical Properties of NiTe2 Single Crystal Grown via Molten Salt Flux Method

(2023) Yeonjin Je et al.   Electronic Materials Letters

Ballistic two-dimensional InSe transistors

(2023) Jianfeng Jiang et al.   NATURE

High‐throughput screening of phase‐engineered atomically thin transition‐metal dichalcogenides for van der Waals contacts at the Schottky–Mott limit

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ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors

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Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

(2023) Yaoqiang Zhou et al.   Nature Communications

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

(2023) Seunguk Song et al.   Nature Communications

All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors

(2022) Xiankun Zhang et al.   ADVANCED MATERIALS

Reduced Schottky barrier height at metal/CVD-grown MoTe2 interface

(2022) Pengzhen Zhang et al.   APPLIED PHYSICS LETTERS

The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

(2022) Muhammad Asghar Khan et al.   Scientific Reports

Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits

(2022) Tom Schram et al.   ADVANCED MATERIALS

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms (Adv. Mater. 48/2022)

(2022) Yang Shen et al.   ADVANCED MATERIALS

Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

(2021) Cyrine Ernandes et al.   npj 2D Materials and Applications

Promises and prospects of two-dimensional transistors

(2021) Yuan Liu et al.   NATURE

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Dimensional crossover and band topology evolution in ultrathin semimetallic NiTe2 films

(2021) Joseph A. Hlevyack et al.   npj 2D Materials and Applications

Highly Efficient, Surface Ligand Modified Quantum Dot Light‐Emitting Diodes Driven by Type‐Controllable MoTe 2 Thin Film Transistors via Electron Charge Enhancer

(2021) Geun Woo Baek et al.   Advanced Electronic Materials

Two-Dimensional Metallic NiTe2 with Ultrahigh Environmental Stability, Conductivity, and Electrocatalytic Activity

(2020) Jianping Shi et al.   ACS Nano

Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

(2020) Yuxuan Ke et al.   Advanced Electronic Materials

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Controllable P‐ and N‐Type Conversion of MoTe 2 via Oxide Interfacial Layer for Logic Circuits

(2019) Yong Ju Park et al.   Small

Contact Engineering High Performance n-Type MoTe2 Transistors

(2019) Michal J Mleczko et al.   NANO LETTERS

A review on Raman finger prints of doping and strain effect in TMDCs

(2019) Muhammad Waqas Iqbal et al.   MICROELECTRONIC ENGINEERING

Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoO x /Pt Contact Media for Indium-Tin-Oxide Source/Drain

(2018) Yongjae Cho et al.   ADVANCED FUNCTIONAL MATERIALS

Synthetic Control of Two-Dimensional NiTe2 Single Crystals with Highly Uniform Thickness Distributions

(2018) Bei Zhao et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

High-performance multilayer WSe2 field-effect transistors with carrier type control

(2017) Pushpa Raj Pudasaini et al.   Nano Research

Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

(2016) Shu Nakaharai et al.   ACS Applied Materials & Interfaces

Superconductivity in Weyl semimetal candidate MoTe2

(2016) Yanpeng Qi et al.   Nature Communications

Molecular beam epitaxy of thin HfTe2semimetal films

(2016) S Aminalragia-Giamini et al.   2D Materials

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

(2016) Y. Liu et al.   Science Advances

Bandgap opening in few-layered monoclinic MoTe 2

(2015) Dong Hoon Keum et al.   Nature Physics

High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

(2015) David J. Perello et al.   Nature Communications

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

(2014) Mahito Yamamoto et al.   ACS Nano

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Large, non-saturating magnetoresistance in WTe2

(2014) Mazhar N. Ali et al.   NATURE

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology