Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

Doping-free complementary WSe2 circuit via van der Waals metal integration

(2020) Lingan Kong et al.   Nature Communications

Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides

(2019) Kai Sotthewes et al.   Journal of Physical Chemistry C

Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation

(2019) Enxiu Wu et al.   Science Advances

Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters

(2019) Dianyu Qi et al.   ACS Nano

Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts

(2018) Ching-Hua Wang et al.   NANO LETTERS

Wafer-Scale Epitaxial 1T′, 1T′-2H Mixed, and 2H Phases MoTe2 Thin Films Grown by Metal-Organic Chemical Vapor Deposition

(2018) TaeWan Kim et al.   Advanced Materials Interfaces

Sub 20 meV Schottky barriers in metal/MoTe2 junctions

(2018) Nicola J Townsend et al.   2D Materials

Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors

(2018) Chen Pan et al.   Advanced Electronic Materials

In situ immune response and mechanisms of cell damage in central nervous system of fatal cases microcephaly by Zika virus

(2018) Raimunda S. S. Azevedo et al.   Scientific Reports

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

(2018) Amritesh Rai et al.   Crystals

Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices

(2018) Tao Liu et al.   ADVANCED MATERIALS

Vertical Charge Transport and Negative Transconductance in Multilayer Molybdenum Disulfides

(2017) Yuan Liu et al.   NANO LETTERS

Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes

(2017) Yu Zhou et al.   NANO LETTERS

Structural phase transition in monolayer MoTe2 driven by electrostatic doping

(2017) Ying Wang et al.   NATURE

Multifunctional high-performance van der Waals heterostructures

(2017) Mingqiang Huang et al.   Nature Nanotechnology

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

(2017) Ya-Qing Bie et al.   Nature Nanotechnology

Near-Infrared Photodetectors Based on MoTe2 /Graphene Heterostructure with High Responsivity and Flexibility

(2017) Wenzhi Yu et al.   Small

Probing defect dynamics in monolayer MoS2 via noise nanospectroscopy

(2017) Seung Hyun Song et al.   Nature Communications

Difference in gating and doping effects on the band gap in bilayer graphene

(2017) Takaki Uchiyama et al.   Scientific Reports

Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions

(2016) Yang Xu et al.   ACS Nano

Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

(2016) Jiang Pu et al.   ADVANCED MATERIALS

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

(2016) Xiaochi Liu et al.   ADVANCED MATERIALS

Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms

(2016) Steven P. Koenig et al.   NANO LETTERS

Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

(2016) Amirhasan Nourbakhsh et al.   NANO LETTERS

Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

(2016) Hsun-Jen Chuang et al.   NANO LETTERS

Large-scale chemical assembly of atomically thin transistors and circuits

(2016) Mervin Zhao et al.   Nature Nanotechnology

Exfoliation and Raman Spectroscopic Fingerprint of Few-Layer NiPS3 Van der Waals Crystals

(2016) Cheng-Tai Kuo et al.   Scientific Reports

3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides

(2015) Yuzheng Guo et al.   ACS Applied Materials & Interfaces

Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2

(2015) Ignacio Gutiérrez Lezama et al.   NANO LETTERS

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

(2015) Lili Yu et al.   NANO LETTERS

Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator

(2015) Weinan Zhu et al.   NANO LETTERS

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

(2014) Mahmut Tosun et al.   ACS Nano

Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

(2014) Claudia Ruppert et al.   NANO LETTERS

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution

(2014) Joonki Suh et al.   NANO LETTERS

Photovoltaic and Photothermoelectric Effect in a Double-Gated WSe2 Device

(2014) Dirk J. Groenendijk et al.   NANO LETTERS

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

(2014) Xidong Duan et al.   Nature Nanotechnology

Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating

(2014) Michele Buscema et al.   Nature Communications

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

(2012) Thanasis Georgiou et al.   Nature Nanotechnology

CMOS-based carbon nanotube pass-transistor logic integrated circuits

(2012) Li Ding et al.   Nature Communications

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Kelvin probe force microscopy and its application

(2010) Wilhelm Melitz et al.   SURFACE SCIENCE REPORTS