All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors

Hidden Vacancy Benefit in Monolayer 2D Semiconductors

(2021) Xiankun Zhang et al.   ADVANCED MATERIALS

Promises and prospects of two-dimensional transistors

(2021) Yuan Liu et al.   NATURE

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

(2021) Xiankun Zhang et al.   Nature Communications

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Metastable 1T′-phase group VIB transition metal dichalcogenide crystals

(2021) Zhuangchai Lai et al.   NATURE MATERIALS

Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

(2021) Meng Peng et al.   Science Advances

Record-high saturation current in end-bond contacted monolayer MoS2 transistors

(2021) Jiankun Xiao et al.   Nano Research

Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device

(2021) Duc Anh Nguyen et al.   Nano Energy

Controllable Doping in 2D Layered Materials

(2021) Zhen Wang et al.   ADVANCED MATERIALS

Molecule‐Upgraded van der Waals Contacts for Schottky‐Barrier‐Free Electronics

(2021) Xiankun Zhang et al.   ADVANCED MATERIALS

Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer

(2020) Kraig Andrews et al.   ACS Nano

General synthesis of two-dimensional van der Waals heterostructure arrays

(2020) Jia Li et al.   NATURE

Multilayer InSe–Te van der Waals Heterostructures with an Ultrahigh Rectification Ratio and Ultrasensitive Photoresponse

(2020) Fanglu Qin et al.   ACS Applied Materials & Interfaces

Atomically Controlled Tunable Doping in High‐Performance WSe 2 Devices

(2020) Chin‐Sheng Pang et al.   Advanced Electronic Materials

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

(2019) Yan Wang et al.   NATURE

Epitaxial van der Waals Contacts between Transition-Metal Dichalcogenide Monolayer Polymorphs

(2019) Chang-Soo Lee et al.   NANO LETTERS

van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling‐Bond‐Free WSe 2 and WS 2

(2019) Ruixia Wu et al.   ADVANCED FUNCTIONAL MATERIALS

A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS 2 –Metal Junction

(2019) Zheng Yang et al.   ADVANCED MATERIALS

van der Waals epitaxial growth of ultrathin metallic NiSe nanosheets on WSe2 as high performance contacts for WSe2 transistors

(2019) Bei Zhao et al.   Nano Research

End-Bonded Metal Contacts on WSe2 Field-Effect Transistors

(2019) Chun-Hao Chu et al.   ACS Nano

Strain-Engineered van der Waals Interfaces of Mixed-Dimensional Heterostructure Arrays

(2019) Baishan Liu et al.   ACS Nano

Evidence for a narrow band gap phase in 1T′ WS2 nanosheet

(2019) Debora Pierucci et al.   APPLIED PHYSICS LETTERS

Defect‐Engineered Atomically Thin MoS 2 Homogeneous Electronics for Logic Inverters

(2019) Li Gao et al.   ADVANCED MATERIALS

Gapless van der Waals Heterostructures for Infrared Optoelectronic Devices

(2019) Yao Wen et al.   ACS Nano

Tellurene Photodetector with High Gain and Wide Bandwidth

(2019) Chenfei Shen et al.   ACS Nano

Contact engineering high-performance ambipolar multilayer tellurium transistors

(2019) Fanglu Qin et al.   NANOTECHNOLOGY

A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics

(2019) Cora M. Went et al.   Science Advances

Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors

(2018) Matin Amani et al.   ACS Nano

Tellurium: Fast Electrical and Atomic Transport along the Weak Interaction Direction

(2018) Yuanyue Liu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

(2018) Hyung Gon Shin et al.   NANO LETTERS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

(2018) Sang-Soo Chee et al.   ADVANCED MATERIALS

Solution-processable 2D semiconductors for high-performance large-area electronics

(2018) Zhaoyang Lin et al.   NATURE

Epitaxial Growth and Band Structure of Te Film on Graphene

(2017) Xiaochun Huang et al.   NANO LETTERS

Metallic Vanadium Disulfide Nanosheets as a Platform Material for Multifunctional Electrode Applications

(2017) Qingqing Ji et al.   NANO LETTERS

Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode

(2017) Xiankun Zhang et al.   Nature Communications

High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

(2016) Jingli Wang et al.   ADVANCED MATERIALS

Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures

(2016) Chenxi Zhang et al.   2D Materials

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

(2016) Y. Liu et al.   Science Advances

Black Phosphorus: Narrow Gap, Wide Applications

(2015) Andres Castellanos-Gomez   Journal of Physical Chemistry Letters

An Atomically Layered InSe Avalanche Photodetector

(2015) Sidong Lei et al.   NANO LETTERS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS