The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

Analog–digital hybrid computing with SnS2 memtransistor for low-powered sensor fusion

(2022) Shania Rehman et al.   Nature Communications

UV light modulated synaptic behavior of MoTe2/BN heterostructure

(2021) Jing Zhang et al.   NANOTECHNOLOGY

Improved Performances of CVD‐Grown MoS 2 Based Phototransistors Enabled by Encapsulation

(2021) Yujue Yang et al.   Advanced Materials Interfaces

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction

(2021) Fan Wu et al.   ACS Applied Materials & Interfaces

Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe2 Heterostructures

(2021) Amir Muhammad Afzal et al.   ACS Applied Materials & Interfaces

Enhanced Optoelectronic Performance of CVD-Grown Metal–Semiconductor NiTe2/MoS2 Heterostructures

(2020) Xiaokun Zhai et al.   ACS Applied Materials & Interfaces

Highly Conductive, Scalable, and Machine Washable Graphene-Based E-Textiles for Multifunctional Wearable Electronic Applications

(2020) Shaila Afroj et al.   ADVANCED FUNCTIONAL MATERIALS

Tunable and nonvolatile multibit data storage memory based on MoTe2/Boron Nitride/Graphene heterostructures through contact engineering

(2020) Enxiu Wu et al.   NANOTECHNOLOGY

Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS 2 /h‐BN/Graphene Heterostructures

(2020) Bablu Mukherjee et al.   ADVANCED FUNCTIONAL MATERIALS

Gate‐Controlled Polarity‐Reversible Photodiodes with Ambipolar 2D Semiconductors

(2020) Junli Du et al.   ADVANCED FUNCTIONAL MATERIALS

Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light

(2020) Shania Rehman et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Fowler-Nordheim tunneling characteristics of graphene/hBN/metal heterojunctions

(2019) Muhammad Zahir Iqbal et al.   JOURNAL OF APPLIED PHYSICS

Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation

(2019) Enxiu Wu et al.   Science Advances

Multibit Optoelectronic Memory in Top‐Floating‐Gated van der Waals Heterostructures

(2019) Wenhao Huang et al.   ADVANCED FUNCTIONAL MATERIALS

Contact Engineering High Performance n-Type MoTe2 Transistors

(2019) Michal J Mleczko et al.   NANO LETTERS

Tuning the Polarity of MoTe2 FETs by Varying the Channel Thickness for Gas-Sensing Applications

(2019) Asha Rani et al.   SENSORS

Preparation of Boron Nitride Nanoparticles with Oxygen Doping and a Study of Their Room-Temperature Ferromagnetism

(2018) Qing Lu et al.   ACS Applied Materials & Interfaces

Engineering few-layer MoTe2 devices by Co/hBN tunnel contacts

(2018) Mengjian Zhu et al.   APPLIED PHYSICS LETTERS

Specific and Highly-Sensitive Detection of Ketone Compounds Based on p-type MoTe2 under Ultraviolet Illumination

(2018) Enxiu Wu et al.   ACS Applied Materials & Interfaces

High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors

(2016) Domenico De Fazio et al.   ACS Nano

High temperature Raman investigation of few-layer MoTe2

(2016) Hongguang Zhang et al.   APPLIED PHYSICS LETTERS

Superconductivity in Weyl semimetal candidate MoTe2

(2016) Yanpeng Qi et al.   Nature Communications

Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

(2016) Y. Liu et al.   Science Advances

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

(2015) Atiye Pezeshki et al.   ACS Nano

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

(2015) Shu Nakaharai et al.   ACS Nano

Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2

(2015) Ignacio Gutiérrez Lezama et al.   NANO LETTERS

Bandgap opening in few-layered monoclinic MoTe 2

(2015) Dong Hoon Keum et al.   Nature Physics

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides

(2014) Saptarshi Das et al.   ACS Nano

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

(2014) Claudia Ruppert et al.   NANO LETTERS

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

Optoelectronic Memory Using Two-Dimensional Materials

(2014) Sidong Lei et al.   NANO LETTERS

Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

(2014) Jason S. Ross et al.   Nature Nanotechnology

Photoinduced doping in heterostructures of graphene and boron nitride

(2014) L. Ju et al.   Nature Nanotechnology

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

(2014) Wenjuan Zhu et al.   Nature Communications

WSe2 field effect transistors with enhanced ambipolar characteristics

(2013) Saptarshi Das et al.   APPLIED PHYSICS LETTERS

Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces

(2013) Yi-Hsien Lee et al.   NANO LETTERS

Electroluminescence in Single Layer MoS2

(2013) R. S. Sundaram et al.   NANO LETTERS

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

(2013) Manish Chhowalla et al.   Nature Chemistry

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

A roadmap for graphene

(2012) K. S. Novoselov et al.   NATURE

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Coupling of excitons and defect states in boron-nitride nanostructures

(2011) C. Attaccalite et al.   PHYSICAL REVIEW B

Graphene transistors

(2010) Frank Schwierz   Nature Nanotechnology

Roll-to-roll production of 30-inch graphene films for transparent electrodes

(2010) Sukang Bae et al.   Nature Nanotechnology

Large-scale pattern growth of graphene films for stretchable transparent electrodes

(2009) Keun Soo Kim et al.   NATURE