Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

标题
Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 10, Pages 1004-1007
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-09-04
DOI
10.1109/led.2015.2474265

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation