N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage

出版年份 2016 全文链接

标题

作者

关键词

出版物

Volume 37, Issue 1, Pages 77-80

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-11-21

DOI

10.1109/led.2015.2502253

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