Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology

(2021) Mohamadali Malakoutian et al.   CRYSTAL GROWTH & DESIGN

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

(2020) Brian Romanczyk et al.   IEEE ELECTRON DEVICE LETTERS

Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond

(2020) William M Waller et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond

(2020) Daniel E. Field et al.   ACS Applied Materials & Interfaces

Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy

(2019) Zhe Cheng et al.   ACS Applied Materials & Interfaces

A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN

(2019) Malakoutian et al.   Crystals

Realization of high quality silicon nitride deposition at low temperatures

(2019) V. K. Surana et al.   JOURNAL OF APPLIED PHYSICS

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

(2019) R. Soleimanzadeh et al.   JOURNAL OF APPLIED PHYSICS

A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4-coated N-polar GaN

(2019) Matthew A Laurent et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

(2019) Reza Soleimanzadeh et al.   IEEE ELECTRON DEVICE LETTERS

Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

(2018) Luke Yates et al.   ACS Applied Materials & Interfaces

Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$

(2018) Xun Zheng et al.   IEEE ELECTRON DEVICE LETTERS

Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

(2018) Yongle Qi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

(2018) Brian Romanczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

(2017) Steven Wienecke et al.   IEEE ELECTRON DEVICE LETTERS

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

(2017) Huaxing Jiang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phonon conduction in GaN-diamond composite substrates

(2017) Jungwan Cho et al.   JOURNAL OF APPLIED PHYSICS

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate

(2017) Adarsh Nigam et al.   AIP Advances

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

(2016) Julian Anaya et al.   ACTA MATERIALIA

Effect of grain size of polycrystalline diamond on its heat spreading properties

(2016) Roland B. Simon et al.   Applied Physics Express

Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers

(2016) Huarui Sun et al.   IEEE ELECTRON DEVICE LETTERS

Anisotropic and inhomogeneous thermal conduction in suspended thin-film polycrystalline diamond

(2016) Aditya Sood et al.   JOURNAL OF APPLIED PHYSICS

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

(2015) Huarui Sun et al.   APPLIED PHYSICS LETTERS

Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface

(2015) Jr-Tai Chen et al.   JOURNAL OF CRYSTAL GROWTH

Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

(2014) James W. Pomeroy et al.   IEEE ELECTRON DEVICE LETTERS

Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

(2014) Stacia Keller et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

N-polar GaN epitaxy and high electron mobility transistors

(2013) Man Hoi Wong et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Influence of strain on thermal conductivity of silicon nitride thin films

(2012) M T Alam et al.   JOURNAL OF MICROMECHANICS AND MICROENGINEERING

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

(2011) Kazuyuki Hirama et al.   APPLIED PHYSICS LETTERS

Diamond overgrown InAlN/GaN HEMT

(2011) M. Alomari et al.   DIAMOND AND RELATED MATERIALS

Electrostatic Grafting of Diamond Nanoparticles: A Versatile Route to Nanocrystalline Diamond Thin Films

(2009) Hugues A. Girard et al.   ACS Applied Materials & Interfaces

A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

(2009) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Thermal Characterization of $\hbox{Si}_{3}\hbox{N}_{4}$ Thin Films Using Transient Thermoreflectance Technique

(2009) Suyuan Bai et al.   IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS