Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume 39, Issue 3, Pages 409-412

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2018-01-30

DOI

10.1109/led.2018.2799160

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