Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
出版年份 2021 全文链接
标题
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 119, Issue 7, Pages 072105
出版商
AIP Publishing
发表日期
2021-08-18
DOI
10.1063/5.0058587
参考文献
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