Vertical Tunneling Field-Effect Transistor With Germanium Source and T-Shaped Silicon Channel for Switching and Biosensing Applications: A Simulation Study
出版年份 2022 全文链接
标题
Vertical Tunneling Field-Effect Transistor With Germanium Source and T-Shaped Silicon Channel for Switching and Biosensing Applications: A Simulation Study
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 9, Pages 5170-5176
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2022-07-16
DOI
10.1109/ted.2022.3189326
参考文献
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