Article
Chemistry, Multidisciplinary
Tatsuhiko Aizawa, Imron Rsadi, Ersyzario Edo Yunata
Summary: This paper focuses on plasma diagnosis of a N-2-H-2 gas mixture for nitriding process optimization. It is found that hydrogen has a significant impact on plasma generation, with an optimum hydrogen content of 20%. Experimental results demonstrate that optimizing the hydrogen gas content can improve surface hardness and achieve low temperature nitriding under high nitrogen flux.
APPLIED SCIENCES-BASEL
(2022)
Article
Engineering, Electrical & Electronic
Seyed Saleh Ghoreishi, Mahdi Vadizadeh, Reza Yousefi, Amard Afzalian
Summary: The study proposes a junctionless carbon nanotube FED (JL-CNT-FED) structure with reduced $V_{DD}$ of 0.5 V, achieving an excellent $I_{ON}$ / $I_{OFF}$ ratio for low-power digital applications. Simulation results show significant improvements in terms of $I_{ON}$ / $I_{OFF}$ ratio and power dissipation compared to traditional JL-FEDs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Jaeyong Jeong, Seong Kwang Kim, Jongmin Kim, Dae-Myeong Geum, Sanghyeon Kim
Summary: In this letter, the authors demonstrate a monolithic 3D RF platform using three-dimensional (3D) stacked InGaAs high-electron-mobility transistors (HEMTs) on Si with back metal. The fabrication process involves wafer bonding and the insertion of back metal during 3D integration. The impact of the back metal on the DC and RF performance of the stacked InGaAs HEMTs is investigated, and impressive high-frequency properties are achieved, with a current gain cutoff frequency (f(T)) of 307 GHz and a maximum oscillation frequency (f(MAX)) of 765 GHz, the highest reported in 3D stacked RF transistors.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Physical
Khadijeh Farhadian-Azizi, Marzieh Abbasi-Firouzjah, Majid Abbasi, Mojtaba Hashemzadeh
Summary: This study investigated the growth of copper oxide thin films using a DC/RF plasma sputtering process. The influence of applied power and Ar/O2 flow ratio on film properties and their relationship to the plasma species and chemical reactions were analyzed. It was found that the concentration and abundance ratio of active species in the plasma play a crucial role in the film growth process and properties. By controlling various factors, such as ionization rate, energy of active species, film growth rate, and relative concentration of copper and oxygen species in the plasma, copper oxide thin films with low energy band gap can be synthesized at low temperatures.
SURFACES AND INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Eric J. Carlson, Joshua R. Smith
Summary: This paper presents a step-up DC-DC converter that achieves positive efficiency even at extremely low input voltage through a stepwise gate-drive technique. The converter also features automatic hibernation function to reduce quiescent power consumption. The efficiency and input impedance of the converter can be programmably adjusted for various applications.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2023)
Article
Chemistry, Analytical
Jiho Jung, Ickjin Kwon
Summary: This paper proposes a fully integrated capacitive DC-DC boost converter for ultra-low-power IoT applications operating with RF energy harvesting. The converter achieves high efficiency at an input voltage as low as 0.1 V by simultaneously applying gate bias boosting and dynamic body biasing techniques. The converter outperforms the conventional cross-coupled charge pump in terms of peak power conversion efficiency.
Article
Green & Sustainable Science & Technology
Hossam A. Gabbar, Sharif Abu Darda, Vahid Damideh, Isaac Hassen, Mohamed Aboughaly, Davide Lisi
Summary: The improvement in living standards has led to exponential growth in urban populations, resulting in a significant increase in municipal solid waste production. Plasma technologies have proven beneficial for recycling materials and generating energy from solid waste, leading to a high demand for sustainable, cost-effective waste-to-energy facilities. Advanced thermal plasma technologies, including atmospheric DC, RF, and Microwave plasma torches, offer efficient waste treatment options at both small and industrial scales, with DC and RF torches showing economic advantages for large-scale waste treatment and energy production. Innovative technologies, environmental impact mitigation, and cost effectiveness are critical factors for enhancing the feasibility and sustainability of plasma-based waste treatment plants.
SUSTAINABLE ENERGY TECHNOLOGIES AND ASSESSMENTS
(2021)
Article
Physics, Applied
Sangeeta Singh, Pallavi Kumari
Summary: This study reports a novel n-type GaN/InGaN/GaN heterostructure vertical double-gate tunnel field-effect transistor (VTFET) using thorough calibrated simulation. By introducing a polarization layer near the source-channel junction, the drain current is increased due to the increase in charge concentration near the interface. The optimized structure with HfO2 as the dielectric material achieves excellent performance in terms of dc and analog/RF properties, making it a promising alternative for high-power steep switching analog and RF applications.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
(2023)
Article
Engineering, Electrical & Electronic
Kaushal Kumar, Ajay Kumar, Vinay Kumar, Subhash Chander Sharma
Summary: This research article presents a novel Si0.2Ge0.8/GaAs compound with a dual dielectric gate for a charge plasma-based junctionless TFET. By incorporating a combination of band gap, gate underlap, and gate dielectric engineering, the device shows significant improvements in analog/RF attributes. It achieves higher ON-state current, suppressed ambipolar current, and improved transconductance, demonstrating its suitability for wireless applications.
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
(2023)
Article
Computer Science, Information Systems
Nour El I. Boukortt, Trupti Ranjan Lenka, Salvatore Patane, Giovanni Crupi
Summary: The impact of changing the fin width, fin height, gate dielectric material, and gate length on the performance of a 3D 14nm SOI n-FinFET was analyzed using a calibrated TCAD model. A new device configuration was proposed based on optimal values obtained from the analysis, leading to significant improvements in electrical characteristics.
Article
Nanoscience & Nanotechnology
S. Ashok Kumar, J. Charles Pravin, V. Sandeep, R. Sridevi
Summary: In this article, a dopingless Multi Bridge Channel (MBC) implementation in a silicon channel is proposed using a metal work function electrode and Charge Plasma (CP) method. The electrical characteristics of the proposed device are compared with a conventionally undoped double gate MOSFET using Sentaurus Technology Computer-Aided Design (TCAD) simulation. The MBC concept and charge plasma method result in almost double the current in the device, with the threshold voltage and Iof f controlled by the metal's work function placed above the semiconductor.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2023)
Article
Engineering, Electrical & Electronic
Jingfei Wang, Guishu Liang, Lei Qi, Xiangyu Zhang
Summary: This study reveals a new phenomenon (self-surge current mode) and proposes a novel IGBT desaturation detection method based on this phenomenon. The proposed method enables reliable and sensitive detection, with little impact on the maximum current performance of the IGBT devices, preventing them from entering the extremely high loss desaturation region.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2023)
Review
Engineering, Chemical
Owen Slattery, Anna Trubetskaya, Sean Moore, Olivia McDermott
Summary: This study reviews the application of Lean tools in medical device design and new product introduction processes, highlighting the benefits and challenges of integrating Lean with existing NPI processes. By eliminating waste, focusing on customer value, Lean achieves continuous improvement in the medical device industry NPI process.
Article
Physics, Applied
Jiang-Hong Sun, Su-Rong Sun, Chong Niu, Hai-Xing Wang
Summary: The study applied a 2D model to investigate plasma-electrode interaction in a laminar argon DC plasma torch, considering the effects of different cathodes on plasma characteristics. The results show that different cathodes significantly influence the current density and potential drop in the plasma column, leading to slightly different torch exit parameters.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Physics, Fluids & Plasmas
Kunal Soni, Rodrigo Antunes, Roland Steiner, Lucas Moser, Laurent Marot, Ernst Meyer
Summary: This experimental investigation focuses on the ion flux-energy distribution functions obtained across grounded grids in an asymmetric capacitively coupled RF source using a helium discharge. The study demonstrates that confining plasma with grids can significantly reduce ion flux and wall sputtering rates, making it important for fusion devices and plasma processing applications.
PLASMA SOURCES SCIENCE & TECHNOLOGY
(2022)
