GaAs0.5Sb0.5/ In0.53Ga0.47As heterojunction dopingless charge plasma-based tunnel FET for analog/digital performance improvement

标题
GaAs0.5Sb0.5/ In0.53Ga0.47As heterojunction dopingless charge plasma-based tunnel FET for analog/digital performance improvement
作者
关键词
Ambipolar, Charge plasma, Hetero-gate- dielectric, Interface trap charges (ITCs), Linearity, Analog/RF figure Of merits (FoMs)
出版物
SUPERLATTICES AND MICROSTRUCTURES
Volume 142, Issue -, Pages 106522
出版商
Elsevier BV
发表日期
2020-04-20
DOI
10.1016/j.spmi.2020.106522

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