Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor

标题
Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 1, Pages 80-86
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-11-24
DOI
10.1109/ted.2010.2089525

向作者/读者发起求助以获取更多资源

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started