Oxygen vacancy concentration as a function of cycling and polarization state in TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitors studied by x-ray photoemission electron microscopy

Enhanced electroresistance endurance of capped Hf0.5Zr0.5O2 ultrathin epitaxial tunnel barriers

(2022) Xiao Long et al.   APL Materials

Hard x-ray photoelectron spectroscopy of tunable oxide interfaces

(2021) Martina Müller et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

(2020) W. Hamouda et al.   APPLIED PHYSICS LETTERS

Charge transport mechanism in La:HfO2

(2020) V. A. Gritsenko et al.   APPLIED PHYSICS LETTERS

Polarization switching in thin doped HfO2 ferroelectric layers

(2020) Monica Materano et al.   APPLIED PHYSICS LETTERS

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

(2019) Furqan Mehmood et al.   Advanced Materials Interfaces

Analysis of Performance Instabilities of Hafnia-Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents

(2018) Franz P. G. Fengler et al.   Advanced Electronic Materials

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

(2018) Si Joon Kim et al.   JOM

Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films

(2018) Damir R. Islamov et al.   ACTA MATERIALIA

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

(2017) E. O. Filatova et al.   Scientific Reports

Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface

(2016) Roy Winter et al.   ACS Applied Materials & Interfaces

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

(2016) Haibo Fan et al.   AIP Advances

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Reversible oxygen scavenging at room temperature using electrochemically reduced titanium oxide nanotubes

(2015) Thomas Close et al.   Nature Nanotechnology

Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopy

(2014) C. Lenser et al.   PHYSICAL REVIEW B

Interface electronic structure in a metal/ferroelectric heterostructure under applied bias

(2013) J. E. Rault et al.   PHYSICAL REVIEW B

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Calculations of electron inelastic mean free paths. IX. Data for 41 elemental solids over the 50 eV to 30 keV range

(2010) S. Tanuma et al.   SURFACE AND INTERFACE ANALYSIS