Charge transport mechanism in La:HfO2

Determination of trap density in hafnia films produced by two atomic layer deposition techniques

(2017) D.R. Islamov et al.   MICROELECTRONIC ENGINEERING

Electronic properties of hafnium oxide: A contribution from defects and traps

(2016) Vladimir A. Gritsenko et al.   PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

(2015) Takao Shimizu et al.   APPLIED PHYSICS LETTERS

Charge transport in amorphous Hf0.5Zr0.5O2

(2015) D. R. Islamov et al.   APPLIED PHYSICS LETTERS

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Origin of traps and charge transport mechanism in hafnia

(2014) D. R. Islamov et al.   APPLIED PHYSICS LETTERS

The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide

(2014) T. V. Perevalov et al.   APPLIED PHYSICS LETTERS

Transport mechanisms of electrons and holes in dielectric films

(2013) K A Nasyrov et al.   PHYSICS-USPEKHI

First principles study of oxygen vacancy states in monoclinic ZrO2: Interpretation of conduction characteristics

(2012) Ji-Hyun Hur et al.   JOURNAL OF APPLIED PHYSICS

Charge transport in dielectrics via tunneling between traps

(2011) K. A. Nasyrov et al.   JOURNAL OF APPLIED PHYSICS

Charge transport in dielectrics by tunneling between traps

(2011) K. A. Nasyrov et al.   JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Modeling of leakage currents in high-κ dielectrics: Three-dimensional approach via kinetic Monte Carlo

(2010) Gunther Jegert et al.   APPLIED PHYSICS LETTERS

Charge transport mechanism in amorphous alumina

(2009) Yu. N. Novikov et al.   APPLIED PHYSICS LETTERS