Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

标题
Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States
作者
关键词
-
出版物
ACS Nano
Volume 12, Issue 6, Pages 6292-6300
出版商
American Chemical Society (ACS)
发表日期
2018-06-01
DOI
10.1021/acsnano.8b03331

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