Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

标题
Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact
作者
关键词
-
出版物
NANO LETTERS
Volume 18, Issue 3, Pages 1937-1945
出版商
American Chemical Society (ACS)
发表日期
2018-02-06
DOI
10.1021/acs.nanolett.7b05338

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