SnSe/MoS 2 van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope
出版年份 2019 全文链接
标题
SnSe/MoS
2
van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 31, Issue 49, Pages 1902962
出版商
Wiley
发表日期
2019-10-17
DOI
10.1002/adma.201902962
参考文献
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