H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon

标题
H-Terminated Polycrystalline Diamond p-Channel Transistors on GaN-on-Silicon
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 1, Pages 119-122
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2019-11-14
DOI
10.1109/led.2019.2953245

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