Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

标题
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 3, Pages 832-839
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-01-05
DOI
10.1109/ted.2016.2638855

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