Model of Electron Population and Energy Band Diagram of Multiple-Channel GaN Heterostructures

Multiple-channel GaN heterostructures have been used to improve the device performance of high electron mobility transistors (HEMTs). The object is to achieve highly linear transconductance, low ON-resistance, and large output current. However, the complicated situation of the multiple channels made it difficult to model multiple-channel HEMTs. We report an analytical model of the electron population and the energy band diagram of multiple-channel GaN heterostructures. It is established based on the continuity of electric displacement vector at various interfaces and the electric neutrality of the whole heterostructure. The double-channel, triple-channel, four-channel, and ten-channel heterostructures have been investigated, and the calculation results are compared with the numerical self-consistent Schrodinger-Poisson solution to show the feasibility of the model.

Automated summary

An analytical model of electron population and energy band diagram of multiple-channel GaN heterostructures has been proposed, based on the continuity of electric displacement vector at various interfaces and the electric neutrality of the whole heterostructure. The model has been applied to double-channel, triple-channel, four-channel, and ten-channel heterostructures, with comparison to numerical solutions showing its feasibility.